1 to-220f item symbol ratings unit drain-source voltage v ds 500 continuous drain current i d 14 pulsed drain current i d(puls] 56 gate-source voltage v gs 30 repetitive or non-repetitive i ar *2 14 maximum avalanche energy e as *1 188.2 maximum drain-source dv/dt dv ds /dt *4 20 peak diode recovery dv/dt dv/dt *3 5 max. power dissipation p d ta=25 c 2.16 tc=25 c 70 operating and storage t ch +150 temperature range t stg isolation voltage v iso *5 2 electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2SK3469-01MR fuji power mosfet 200303 n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =500v v gs =0v v ds =400v v gs =0v v gs =30v i d =6a v gs =10v i d =6a v ds =25v v cc =300v i d =6a v gs =10v r gs =10 ? min. typ. max. units v v a na ? s pf nc a v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 1.79 58.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d =250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =25v v gs =0v f=1mhz v cc =250v i d =12a v gs =10v l=1.76mh t ch =25c i f =12a v gs =0v t ch =25c i f =12a v gs =0v -di/dt=100a/s t ch =25c v a a v a mj kv/s kv/s w c c kvrms 500 3.0 5.0 25 250 10 100 0.40 0.52 5.5 11 1200 1800 140 210 6.0 9.0 17 26 15 23 34 51 711 30 45 10 15 11 16.5 14 1.00 1.50 0.7 4.5 -55 to +150 outline drawings [mm] *3 i f =-i d , -di/dt=50a/s, vcc=bv dss , tch=150c *4 v ds = 500v *5 t=60sec, f=60hz < << equivalent circuit schematic gate(g) source(s) drain(d) super f ap-g series *1 l=1.76mh, vcc=50v, see to avalanche energy graph *2 tch=150c < <
2 0 5 10 15 20 25 30 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 rds(on) [ ? ] id [a] typical drain-source on-state resistance 10v 20v 8v 7.5v 7.0v vgs=6.5v 012345678910 0.1 1 10 id[a] vgs[v] typical transfer characteristic 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 20v 10v 8v 7.5v 7.0v id [a] vds [v] typical output characteristics vgs=6.5v characteristics 2SK3469-01MR fuji power mosfet id=f(vgs):80s pulse test, vds=25v,tch=25c id=f(vds):80s pulse test,tch=25c gfs=f(id):80s pulse test, vds=25v,tch=25c rds(on)=f(id):80s pulse test, tch=25c 0.1 1 10 0.1 1 10 100 gfs [s] id [a] typical transconductance 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 allowable power dissipation pd=f(tc) pd [w] tc [ c] 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 450 500 i as =14a i as =6a i as =9a e as [mj] starting tch [ c] maximum avalanche energy vs. starting tch e as =f(starting tch):vcc=50v
3 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode 0 1020304050607080 0 2 4 6 8 10 12 14 16 18 20 22 24 qg [nc] typical gate charge characteristics vgs [v] 480v 300v vcc= 120v 2SK3469-01MR fuji power mosfet vgs=f(qg):id=12a, tch=25c if=f(vsd):80s pulse test,tch=25c t=f(id):vcc=300v, vgs=10v, rg=10 ? -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 rds(on) [ ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=6a,vgs=10v -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250ua vgs(th) [v] tch [ c] 10 -1 10 0 10 1 10 2 10 3 1p 10p 100p 1n 10n c [f] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 10 0 10 1 10 0 10 1 10 2 typical switching characteristics vs. id td(on) tr tf td(off) t [ns] id [a]
4 2SK3469-01MR fuji power mosfet http://www.fujielectric.co.jp/denshi/scd/ 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current vs pulse width i av =f(t av ):starting tch=25 c,vcc=50v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [c/w] t [sec]
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